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<article xsi:noNamespaceSchemaLocation="http://jats.nlm.nih.gov/publishing/1.1/xsd/JATS-journalpublishing1-mathml3.xsd" dtd-version="1.1" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance"><front><journal-meta><journal-id journal-id-type="publisher-id">JERA</journal-id><journal-title-group><journal-title>Journal of Electronic Research and Application</journal-title></journal-title-group><issn>2208-3502</issn><eissn>2208-3510</eissn><publisher><publisher-name>Bio-Byword Scientific Publishing Pty. Ltd.</publisher-name></publisher></journal-meta><article-meta><article-id pub-id-type="doi">10.26689/jera.v9i7.13636</article-id><article-categories><subj-group subj-group-type="heading"><subject>Article</subject></subj-group></article-categories><title>Hardware Development and Application of Silicon Carbide and Gallium Nitride in Integrated Circuit Detection Systems</title><url>https://artdesignp.com/journal/JERA/9/7/10.26689/jera.v9i7.13636</url><author>LiBoran</author><pub-date pub-type="publication-year"><year>2025</year></pub-date><volume>9</volume><issue>7</issue><history><date date-type="pub"><published-time>2025-12-31</published-time></date></history><abstract>Silicon carbide (SiC) and gallium nitride (GaN) are used as wide-bandgap semiconductor materials in the hardware development of integrated circuit detection systems. The impact of material characteristic differences on system performance needs to be considered, and hardware platforms should be adapted to construct a three-dimensional technology management system. In addition, interdisciplinary team collaboration, heat dissipation structure design, long-term reliability assessment and other management aspects, as well as supply chain collaboration, packaging technology selection are of great significance to research and development, and technical management can provide scientific guidance.</abstract><keywords/></article-meta></front><body/><back><ref-list><ref id="B1" content-type="article"><label>1</label><element-citation publication-type="journal"><p>Yuan Y, 2021, Integration and Application of Gallium Nitride and Two Dimensional Materials, thesis, Beijing University of Technology.</p><pub-id pub-id-type="doi"/></element-citation></ref><ref id="B2" content-type="article"><label>2</label><element-citation publication-type="journal"><p>Huang S, 2023, Design of Permanent Magnet Synchronous Motor Drive System Based on Gallium Nitride Power Devices, thesis, South China University of Technology.</p><pub-id pub-id-type="doi"/></element-citation></ref><ref id="B3" content-type="article"><label>3</label><element-citation publication-type="journal"><p>Chen F, 2022, Research on Permanent Magnet Synchronous Motor Drive System Based on Gallium Nitride, thesis, China University of Mining and Technology (Jiangsu).</p><pub-id pub-id-type="doi"/></element-citation></ref><ref id="B4" content-type="article"><label>4</label><element-citation publication-type="journal"><p>Yang Q, 2021, Research on Heterostructure of Gallium Nitride Based on MOCVD, thesis, Guilin University of Electronic Science and Technology.</p><pub-id pub-id-type="doi"/></element-citation></ref><ref id="B5" content-type="article"><label>5</label><element-citation publication-type="journal"><p>Wang J, 2022, Silicon based GaN Micro LED and Flexible Integration, thesis, University of Chinese Academy of Sciences.</p><pub-id pub-id-type="doi"/></element-citation></ref><ref id="B6" content-type="article"><label>6</label><element-citation publication-type="journal"><p>Feng C, Zeng K, Sun H, et al., 2021, Application of Gallium Nitride Semiconductor Materials in Communication Power Supply. 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